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參數(shù)資料
| 型號： | PTB20162 |
| 廠商： | ERICSSON |
| 英文描述： | 40 Watts, 470-900 MHz RF Power Transistor |
| 中文描述： | 40瓦，470-900 MHz射頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | PTB20162 |
e
1
Typical Output Power & Efficiency vs. Input Power
0
10
20
30
40
50
60
0
1
2
Input Power (Watts)
3
4
5
6
7
8
10
20
30
40
50
60
70
E
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
O
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10.0
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
80
0.45
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
2.2
°C/W
PTB 20162
40 Watts, 470–900 MHz
RF Power Transistor
Description
The 20162 is an NPN common emitter RF power transistor intended
for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20226
20162
LOTCODE
40 Watts, 470–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
9/28/98
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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