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參數(shù)資料
| 型號： | PTB20187 |
| 廠商： | ERICSSON |
| 英文描述： | 4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 4瓦，1.8-2.0千兆赫蜂窩無線射頻功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 43K |
| 代理商： | PTB20187 |
PTB 20187
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA
V
(BR)CEO
20
—
—
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
—
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 50 mA
h
FE
20
40
—
—
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 2.00 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA,
f = 2.00 GHz—all phase angles at frequency of test)
G
pe
8
10
—
dB
P-1dB
4
6
—
Watts
η
C
30
—
—
%
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.80
14.49
-7.50
11.49
-10.15
1.90
12.30
-6.16
7.23
-6.29
2.00
10.00
-3.55
4.41
-1.34
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
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| PTB20188 | 4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor |
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| PTB20190 | 175 Watts, 470-806 MHz Digital Television Power Transistor |
| PTB20191 | 12 Watts, 1.78-1.92 GHz RF Power Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20188 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20189 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20190 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:175 Watts, 470-806 MHz Digital Television Power Transistor |
| PTB20191 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20193 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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