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參數(shù)資料
| 型號(hào)： | PTF080901F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | PTF080901F |
Data Sheet
1
2004-04-05
PTF080901E
Package 30248
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
36
38
40
42
44
46
48
50
Output Power (dBm)
M
10
15
20
25
30
35
40
45
50
55
D
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
Efficiency
400 kHz
600 kHz
PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080901 is a 90 W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
2.5
–62
–74
18
40
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
17
40
—
Typ
18
42
–32
Max
—
—
–29
Unit
dB
%
dBc
PTF080901F
Package 31248
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