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參數資料
| 型號： | PTF211301 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管130瓦，2110至2170年兆赫 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 449K |
| 代理商： | PTF211301 |
Data Sheet
1
2004-01-02
PTF211301A
Package 20260
PTF211301
Description
The PTF211301 is a 130–W, internally matched
GOLDMOS
FET intended
for WCDMA applications. It is characaterized for single– and two–carrier
WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures
excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two–carrier WCDMA performance at
2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 dB
- Efficiency = 25%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42 dBc
Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 148 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 28 W average
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
η
D
Min
—
—
—
Typ
–37
13.5
25
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
12
34
—
Typ
13.5
37
–30
Max
—
—
–28
Units
dB
%
dBc
LDMOS RF Power Field Effect Transistor
130 W, 2110–2170 MHz
Two–Carrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 1.50 A, f = 2140 MHz,
3GPP WCDMA signal, P/A R = 8 dB,
10 MHz carrier spacing
-60
-55
-50
-45
-40
-35
-30
36
38
Average Output Power (dBm)
40
42
44
46
I
A
5
10
15
20
25
30
35
D
Efficiency
IM3
ACPR
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
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相關代理商/技術參數 |
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|---|---|
| PTF211301A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211802 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
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