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參數(shù)資料
| 型號： | PTF211802 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管180瓦，2110至2170年兆赫 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 169K |
| 代理商： | PTF211802 |
Data Sheet
4
2004-02-13
PTF211802
Broadband Circuit Impedance Data
V
DD
= 28 V, I
DQ
= 1900 mA, P
OUT
= 30 W AVG Two–Carrier WCDMA
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 2.0 A, P
OUT
(PEP) = 170 W, f = 2140 MHz,
tone spacing = 5 MHz
0
5
10
15
20
25
30
35
40
45
22
24
26
Drain Voltage (V)
28
30
32
34
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
I
Gain
Drain Efficiency
IM3
D
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Case Temperature (°C)
N
3.00 A
6.00 A
9.00 A
12.00 A
15.00 A
18.00 A
Frequency
MHz
Z Source
Z Load
R
jX
R
jX
2070
10.22
-14.00
4.28
1.24
2110
9.56
-13.48
4.06
1.94
2140
9.14
-13.00
3.98
2.42
2170
8.70
-12.60
3.84
2.90
2200
8.24
-12.22
3.76
3.34
Typical Performance
(cont.)
0
0
0
0
2200 MHz
2070 MHz
2200 MHz
2070 MHz
Z Load
Z Source
Z
0
= 50
Z Source
Z Load
G
G
D
S
D
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