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參數(shù)資料
| 型號： | PTF211802E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管180瓦，2110至2170年兆赫 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 169K |
| 代理商： | PTF211802E |
Data Sheet
3
2004-02-13
PTF211802
Intermodulation Distortion vs. Output Power
for selected currents
V
DD
= 28 V, f = 2140 MHz, tone spacing = 5 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
39
41
43
45
47
49
51
53
55
Output Power (dBm), PEP
I
(
2.0 A
1.8 A
2.2 A
2.4 A
1.6 A
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
(PEP) = 170 W, f = 2140 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
Tone Spacing (MHz)
I
5th
3rd Order
7th
Typical Performance
(cont.)
Single–Carrier WCDMA Drive–Up
V
= 28 V, I
= 2.0 A, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH,
67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
0
5
10
15
20
25
30
37
38
39
40
41
42
43
44
45
46
47
Output Power (dBm), Avg.
D
G
-60
-55
-50
-45
-40
-35
-30
A
Gain
Drain Efficiency
ACPR
Two–Tone Drive–Up
V
DD
= 28 V, I
DQ
= 2.0 A, f = 2140 MHz,
tone spacing = 5 MHz
5
10
15
20
25
30
35
40
45
42
44
46
48
50
52
54
Output Power (dBm), PEP
D
-60
-55
-50
-45
-40
-35
-30
-25
-20
Efficiency
IM3
IM5
IM7
I
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