參數(shù)資料
型號(hào): PZT3906
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: PNP General Purpose Amplifier(PNP型通用放大器)
中文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-223, 4 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 49K
代理商: PZT3906
2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
BL
Base Cutoff Current
I
CEX
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain *
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
SWITCHING CHARACTERISTICS
(except MMPQ3906)
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Spice Model
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
BE
= 3.0 V
V
CE
= 30 V, V
BE
= 3.0 V
40
40
5.0
V
V
V
nA
nA
50
50
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.25
0.4
0.85
0.95
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.65
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
V
= 0.5 V, I
C
= 0,
f = 100 kHz
I
C
= 100
μ
A, V
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
250
MHz
C
obo
Output Capacitance
4.5
pF
C
ibo
Input Capacitance
10.0
pF
NF
Noise Figure
(except MMPQ3906)
4.0
dB
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
35
35
225
75
ns
ns
ns
ns
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
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