參數(shù)資料
型號(hào)： Q4003LT
英文描述： TRIAC|400V V(DRM)|3A I(T)RMS|TO-220
中文描述： 可控硅| 400V五（DRM）的| 3A條口（T）的有效值|至220
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 124K
代理商： Q4003LT
Quadrac
Data Sheets
http://www.teccor.com
+1 972-580-7777
E3 - 2
2002 Teccor Electronics
Thyristor Product Catalog
Specific Test Conditions
V±]
— Dynamic breakback voltage (forward and reverse)
V
BO
— Breakover voltage symmetry
C
T
— Trigger firing capacitance
di/dt
— Maximum rate-of-change of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
BO
— Peak breakover current
I
DRM
— Peak off-state current gate open; V
DRM
= maximum rated value
I
GTM
— Peak gate trigger current (10
μ
s Max)
I
H
— Holding current; gate open
I
T(RMS)
— RMS on-state current, conduction angle of 360°
I
TSM
— Peak one-cycle surge
t
gt
— Gate controlled turn-on time
V
BO
— Breakover voltage (forward and reverse)
V
DRM
— Repetitive peak blocking voltage
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25 C unless otherwise specified.
Operating temperature range (T
J
) is -40 C to +125 C.
Storage temperature range (T
S
) is -40 C to +125 C.
Lead solder temperature is a maximum of +230 C for 10 seconds
maximum; 1/16" (1.59 mm) from case.
The case temperature (T
C
) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1)
(2)
(3)
(4)
For either polarity of MT2 with reference to MT1
See Figure E3.1 for I
H
versus T
C
.
See Figure E3.4 and Figure E3.5 for i
T
versus v
T
.
See Figure E3.9 for surge ratings with specific durations.
I
T(RMS)
(5)
Part No.
Isolated
V
DRM
(1)
I
DRM
(1) (10)
V
TM
(1) (3)
Trigger Diac Specifications (T–MT1)
V
BO
[ V ]
(6)
V
BO
(7)
I
BO
C
T
(11)
TO-220
Volts
mAmps
T
C
=
100 °C
Volts
Volts
Volts
(6)
Volts
μAmps
μFarads
T
C
=
25 °C
T
C
=
125 °C
T
C
= 25 °C
See “Package Dimensions” section
for variations. (12)
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
MAX
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
MIN
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
MAX
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4 A
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0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
6 A
8 A
10 A
15 A
MT1
MT2
T
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參數(shù)描述
Q4004D3 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Triacs (0.8 A to 35 A)
Q4004D3RP 功能描述:雙向可控硅 400V 4A 10-10-10mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q4004D3TP 功能描述:雙向可控硅 400V 4A 10-10-10mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q4004D4 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Triacs (0.8 A to 35 A)
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