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參數(shù)資料
| 型號： | Q62702-C1736 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
| 中文描述： | 進步黨硅晶體管自動對焦（自動對焦對于一般應(yīng)用高集電極電流的高電流增益） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 145K |
| 代理商： | Q62702-C1736 |
Semiconductor Group
3
BC 807
BC 808
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 100 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
I
C
= 300 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 807
BC 808
V
(BR)CE0
45
25
–
–
–
–
nA
μ
A
nA
Collector cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
Emitter cutoff current,
V
EB
= 4 V
I
CB0
–
–
–
–
–
–
100
50
100
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
μ
A
BC 807
BC 808
V
(BR)CB0
50
30
5
–
–
–
–
–
–
Emitter-base breakdown voltage,
I
E
= 10
μ
A
V
(BR)EB0
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
CEsat
–
–
0.7
–
h
FE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
V
BEsat
–
–
2
I
EB0
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
f
T
–
200
–
AC characteristics
pF
C
obo
–
10
–
C
ibo
–
60
–
1)
Pulse test:
t
≤
300
μ
s,
D
≤
2 %.
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| Q62702-C1738 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors |
| Q62702-C1739 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors |
| Q62702-C1740 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors |
| Q62702-C1741 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| Q62702-C1742 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
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