參數(shù)資料
型號: Q62702-C2262
廠商: SIEMENS AG
英文描述: PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
中文描述: 進步黨硅數(shù)字晶體管(開關(guān)電路,逆變器,接口電路,驅(qū)動電路)
文件頁數(shù): 2/11頁
文件大?。?/td> 101K
代理商: Q62702-C2262
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
S
21
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料
PDF描述
Q62702-D1280 Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Q62702-D1281 Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Q62702-D1290 Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Q62702-D1040 PNP SILICON PLANAR TRANSISTOR
Q62702-D1061 Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-C2263 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
Q62702-C2264 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
Q62702-C2265 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
Q62702-C2266 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
Q62702-C2275 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)