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參數(shù)資料
| 型號： | Q62702-F664 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON RF TRANSISTORS |
| 中文描述： | 進步黨硅射頻晶體管 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F664 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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相關代理商/技術參數(shù) |
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| Q62702-F676 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors with High Reverse Voltage |
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| Q62702-F683 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors with High Reverse Voltage |
| Q62702-F704 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode (For high-speed switching) |
| Q62702-F721 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
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