參數(shù)資料
型號(hào): Q62702-F776
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
中文描述: NPN硅射頻晶體管(低失真寬帶放大器的集電極電流高達(dá)2 GHz的10毫安到30毫安。)
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 101K
代理商: Q62702-F776
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
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Q62702-F794 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon Transistors with High Reverse Voltage
Q62702-F803 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)
Q62702-F804 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)