- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361196 > Q62702-G38 (SIEMENS AG) Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) PDF資料下載
參數(shù)資料
| 型號： | Q62702-G38 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
| 中文描述： | 硅開關(guān)二極管陣列（橋配置高速開關(guān)二極管芯片） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-G38 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-G44 | GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
| Q62702-K34 | 6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
| Q62702-K35 | 6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
| Q62702-K8 | 3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array |
| Q62702-L90 | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q-62702-G66 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
| Q62702P 178 | 制造商:Osram 功能描述: |
| Q62702P0015 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
| Q62702P0015S002 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk |
| Q62702P0015S003 | 制造商:OSRAM 功能描述:OSRBPX38-3 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。