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參數(shù)資料
| 型號(hào)： | Q62702-L96 |
| 廠商： | SIEMENS AG |
| 英文描述： | GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
| 中文描述： | 砷化鎵場(chǎng)效應(yīng)管（功放為頻率高達(dá)3千兆赫移動(dòng)電話） |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-L96 |
BGC420
High Frequency Products
7
Edition A13, 05/99
SPICE Model
The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For
frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added.
* Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz)
* SIEMENS HIGH FREQUENCY PRODUCTS
* Small Scale MMIC Design Group
.PARAM R=82
** Analysis setup **
*.TRAN 2ns 15u 0 2n
.TEMP +27
.DC LIN V1 0V 4V 0.1V
*.DC LIN V2 0V 3V 0.1V
.STEP PARAM R LIST 56 82 120 680
* Voltage supply
V1
Vcc 0
V2
Vc 0
*Vpul Vc 0
DC 3.0V
DC 0.0V
PULSE(0 3V 100ns 0 0 9us 1000m)
X3
X4
R1
X2
R2
R3
R4
Q1
Vc,4
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
vin
2
C6
Rin
C7
3
V
Rout
Figure. 3: Circuit used in the SPICE File
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