- 您現(xiàn)在的位置：買賣IC網 > PDF目錄361196 > Q62702-L99 (SIEMENS AG) GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) PDF資料下載
參數(shù)資料
| 型號： | Q62702-L99 |
| 廠商： | SIEMENS AG |
| 英文描述： | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| 中文描述： | 砷化鎵場效應管（功率放大器，對于從400兆赫到2.5千兆赫頻率的移動電話） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-L99 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-M9 | GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
| Q62702-P174 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q62702-P1751 | .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
| Q62702-P1752 | .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
| Q62702-P1753 | .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702P 178 | 制造商:Osram 功能描述: |
| Q62702P0015 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
| Q62702P0015S002 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk |
| Q62702P0015S003 | 制造商:OSRAM 功能描述:OSRBPX38-3 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
| Q62702P0015S004 | 制造商:OSRAM 功能描述:OSRBPX38-4 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
發(fā)布緊急采購，3分鐘左右您將得到回復。