- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361184 > Q62702-P180 (SIEMENS AG) NPN-Silizium-Fototransistor Silicon NPN Phototransistor PDF資料下載
參數(shù)資料
| 型號： | Q62702-P180 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 中文描述： | 叩- Silizium - Fototransistor硅npn型光電晶體管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-P180 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-P1805 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q62702-P1821 | GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
| Q62702-P1822 | IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst |
| Q62702-P1826 | Silizium-PIN-Fotodiode mit Tageslichtsperrfilter |
| Q62702-P1829 | Silizium-PIN-Fotodiode mit Tageslichtsperrfilter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702P1806 | 制造商:OSRAM 功能描述:EMITTER IR 880NM 5MM RADIAL |
| Q62702P1821 | 制造商:OSRAM 功能描述:EMITTER IR 950NM 5MM RADIAL |
| Q62702P1825 | 制造商:OSRAM 功能描述:EMITTER IR 950NM SMD |
| Q62702P3558 | 制造商:OSRAM 功能描述:LASER DIODE QW-LD 860NM 3PIN - Bulk |
| Q62702P3577 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 850NM 3PIN TO-18 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。