參數資料
型號: Q62702-P860
廠商: SIEMENS AG
英文描述: GaAs Infrared Emitter
中文描述: 砷化鎵紅外發(fā)射器
文件頁數: 3/11頁
文件大?。?/td> 101K
代理商: Q62702-P860
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關PDF資料
PDF描述
Q62702-B0904 Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)
Q62702-B0907 Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
Q62702-B0908 Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance)
Q62702-B0909 Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance)
Q62702-B0911 Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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