參數(shù)資料
型號: Q67040-A4230-A2
廠商: SIEMENS AG
英文描述: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
中文描述: 由于IGBT的反平行二極管(低正向壓降高開關(guān)速度低尾電流的無閂鎖包括快速滑行二極管)
文件頁數(shù): 2/8頁
文件大?。?/td> 112K
代理商: Q67040-A4230-A2
Semiconductor Group
2
Dec-02-1996
BUP 603D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJC
D
0.63
1
K/W
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 0.7 mA, T
j
= 25 °C
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 30 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 30 A, T
j
= 125 °C
V
GE
= 15 V, I
C
= 60 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 60 A, T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 600 V, V
GE
= 0 V, T
j
= 25 °C
Gate-emitter leakage current
V
GE
= 25 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
-
2.8
2.7
I
CES
-
-
300
μA
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 30 A
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
g
fs
6
-
-
S
C
iss
-
1600
2150
pF
C
oss
-
170
260
C
rss
-
100
150
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