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參數(shù)資料
| 型號(hào)： | Q67042-S4247 |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS2 Power-Transistor |
| 中文描述： | OptiMOS2功率晶體管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 340K |
| 代理商： | Q67042-S4247 |
BSC094N03S G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1350
1800
pF
Output capacitance
C
oss
-
480
640
Reverse transfer capacitance
C
rss
-
64
96
Turn-on delay time
t
d(on)
-
4.5
6.8
ns
Rise time
t
r
-
3.8
5.7
Turn-off delay time
t
d(off)
-
18
27
Fall time
t
f
-
3.0
4.5
Gate Charge Characteristics
3)
Gate to source charge
Q
gs
-
4.3
5.7
nC
Gate charge at threshold
Q
g(th)
-
2.2
2.9
Gate to drain charge
Q
gd
-
2.8
4.2
Switching charge
Q
sw
-
4.9
7.0
Gate charge total
Q
g
-
10
14
Gate plateau voltage
V
plateau
-
3.2
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
9
12
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
11
14
Reverse Diode
Diode continous forward current
I
S
-
-
35
A
Diode pulse current
I
S,pulse
-
-
140
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=35 A,
T
j
=25 °C
-
0.93
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
10
nC
3)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=17.5 A,
R
G
=2.7
V
DD
=15 V,
I
D
=17.5 A,
V
GS
=0 to 5 V
Rev. 1.01
page 3
2004-12-15
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