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參數(shù)資料
| 型號(hào)： | Q67050-T0009 |
| 廠商： | SIEMENS AG |
| 英文描述： | 128 x 128 pixel format, LED or EL Backlight available |
| 中文描述： | SIPMOS小信號(hào)晶體管（N通道增強(qiáng)模式雪崩額定） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 33K |
| 代理商： | Q67050-T0009 |
Semiconductor Group
1
May-30-1996
BSS 159
Preliminary data
SIPMOS
Small-Signal Transistor
N channel
Depletion mode
High dynamic resistance
Pin 1
G
Pin 2
S
Pin 3
D
Type
BSS 159
V
DS
50 V
I
D
0.16 A
R
DS(on)
8
Package
SOT-23
Ordering Code
Q67050-T6
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Gate source voltage
Gate-source peak voltage, aperiodic
Continuous drain current
T
A
= 25 °C
DC drain current, pulsed
T
A
= 25 °C
Power dissipation
T
A
= 25 °C
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate - reverse side
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DGR
Values
50
Unit
V
50
V
GS
V
gs
I
D
±
14
±
20
0.16
A
I
Dpuls
0.48
P
tot
0.36
-55 ... + 150 °C
-55 ... + 150
W
T
j
T
stg
R
thJA
R
thJSR
≤
350
≤
285
E
55 / 150 / 56
K/W
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| Q67050-T0017 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
| Q67050-T6 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
| Q67050-T7 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
| Q67060-S6084-A101 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Smart High-Side Power Switch One Channel: 1 x 1з |
| Q67060-S6087-A101 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
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