- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361230 > Q67060-S6101-A2 (SIEMENS AG) Smart Highside Power Switch PDF資料下載
參數(shù)資料
| 型號： | Q67060-S6101-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān) |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 182K |
| 代理商： | Q67060-S6101-A2 |
BTS 410 D2
Semiconductor Group
2
Pin
1
2
3
Symbol
GND
IN
Vbb
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
-
I
+
4
5
ST
OUT
(Load, L)
S
O
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection
2
)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3
)
= 2
, R
L
= 6.6
, t
d
= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V, T
j,start
=
150°C, T
C
=
150°C const.
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Symbol
V
bb
V
Load dump4
)
Values
Unit
65
V
V
100
I
L
T
j
T
stg
P
tot
self-limited
-40 ...+150
-55 ...+150
A
°C
50
W
I
L
=
1.8
A, Z
L
=
2.3
H, 0
:
E
AS
V
ESD
4.5
J
IN:
all other pins:
1
2
kV
V
IN
I
IN
I
ST
-0.5 ... +6
V
±
5.0
±
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
typ
Unit
min
max
2.5
75
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on PCB
5)
:
R
thJC
R
thJA
--
--
--
--
--
K/W
35
--
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67060-S6101-A3 | Smart Highside Power Switch |
| Q67060-S6101-A4 | Smart Highside Power Switch |
| Q67060-S6103-A2 | Smart Highside Power Switch |
| Q67060-S6103-A3 | Smart Highside Power Switch |
| Q67060-S6103-A4 | Smart Highside Power Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6101-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6101-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。