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參數(shù)資料
| 型號(hào)： | Q67060-S6103-A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側(cè)電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大小： | 318K |
| 代理商： | Q67060-S6103-A3 |
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BTS 410 F2
Semiconductor Group
8
2003-Oct-01
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VINVST
Any kind of load. If V
GND >
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
V
bb
disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
L
R
L
{
Z
L
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for R
L
>
0
:
E
AS
= I
L
·
L
2
·
R
L
·
(
V
bb
+
|V
OUT(CL)
|)
·
ln
(1+
Maximum allowable load inductance for
a single switch off
L = f (I
L
);
T
j,start
=
150°C,
T
C
=
150°C const.,
V
bb
=
12
V,
R
L
=
0
L
[mH]
10000
I
L
·
R
L
|V
OUT(CL)
| )
100
1000
1.5
1.75
2
2.25
2.5
2.75
3
I
L [A]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6103-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6109-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
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