參數(shù)資料
型號: Q67060-S6206-A2
廠商: INFINEON TECHNOLOGIES AG
英文描述: Smart Highside Power Switch
中文描述: 智能阻抗高側(cè)電源開關(guān)
文件頁數(shù): 8/14頁
文件大小: 284K
代理商: Q67060-S6206-A2
GND disconnect with GND pull up
BTS 442 E2
Semiconductor Group
8
2003-Oct-01
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VINVST
Any kind of load. If V
GND >
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with charged inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Inductive Load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
Energy dissipated in PROFET E
AS
= E
bb
+ E
L
- E
R
.
E
Load
<
E
L
,
E
L
=
1/2
*
L
*
I
2
L
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