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參數(shù)資料
| 型號： | Q67060-S6501-A2 |
| 英文描述： | TRANSISTOR HITFET |
| 中文描述： | 晶體管HITFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 138K |
| 代理商： | Q67060-S6501-A2 |
13.07.1998
Semiconductor Group
Page 1
HITFET
BTS 117
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Status feedback with external input resistor
Analog driving possible
Product Summary
Drain source voltage
V
60
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
On-state resistance
Current limit
Nominal load current
Clamping energy
100
7
3.5
1000
m
A
A
mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
μC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
lim itation
1
3
Over-
protection
temperature
+
dv/dt
limitation
Vbb
Short circuit
protection
LOAD
2
Overload
protection
M
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| Q67060-S7003-A2 | TRANSISTOR SMD PROFET LESITUNGS MOSFET |
| Q67060-S7007A2 | TRANSISTOR SMD PROFET LESITUNGS MOSFET |
| Q67060-S6502-A2 | Smart Lowside Power Switch |
| Q67060-S6502-A3 | Smart Lowside Power Switch |
| Q67060-S6503-A2 | Smart Lowside Power Switch |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6502-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6502-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6503-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6503-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6504-A5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HITFET II.Generation BTS 134 D |
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