參數(shù)資料
型號: Q67100-Q2065
廠商: SIEMENS AG
英文描述: 1M x 32-Bit Dynamic RAM Module
中文描述: 100萬× 32位動態(tài)隨機(jī)存儲器模塊
文件頁數(shù): 27/53頁
文件大?。?/td> 418K
代理商: Q67100-Q2065
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
26
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by a Read
1 Clk Interval
SPT03791
CLK
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
NOP
NOP
NOP
NOP
NOP
NOP
DQ’s
(Burst Length = 4, CAS latency = 2, 3)
NOP
Write A
DIN A0
DIN B0
DIN B1
DIN B2
DIN B3
Write B
1 Clk Interval
T5
NOP
DOUT B1
DOUT B0
Input data for the Write is ignored.
, DQ’s
latency = 3
t
CK3
CAS
don’t care
DIN A0
don’t care
(Burst Length = 4, CAS latency = 2, 3)
CLK
, DQ’s
Command
latency = 2
t
CK2
CAS
NOP
T0
DIN A0
Write A
don’t care
Read B
T1
T2
DOUT B0
NOP
NOP
T4
T3
SPT03719
appears on the outputs to avoid data contention.
DOUT B2
Input data must be removed from the DQ’s
at least one clock cycle before the Read data
DOUT B1
DOUT B3
NOP
DOUT B3
NOP
DOUT B2
T6
T7
NOP
T8
相關(guān)PDF資料
PDF描述
Q67100-Q2066 2M x 32-Bit Dynamic RAM Module
Q67100-Q2149 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Q67100-Q2156 4M x 32-Bit EDO-DRAM Module
Q67100-Q2157 4M x 32-Bit EDO-DRAM Module
Q67100-Q2176 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2066 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2067 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2068 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2069 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2072 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM