參數(shù)資料
型號: Q67100-Q2186
廠商: SIEMENS AG
英文描述: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
中文描述: 3.3 4米× 64位江戶內(nèi)存3.3分× 72位江戶記憶體模組
文件頁數(shù): 29/53頁
文件大?。?/td> 418K
代理商: Q67100-Q2186
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
28
8. Burst Termination
8.1 Termination of a Full Page Burst Read Operation
8.2 Termination of a Full Page Burst Write Operation
SPT03722
CLK
NOP
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DOUT A0
DOUT A1 DOUT A2 DOUT A3
NOP
NOP
Burst
Terminate
NOP
NOP
NOP
NOP
latency = 2
, DQ’s
CK2
t
DOUT A3
CK3
latency = 3
t
, DQ’s
DOUT A1
DOUT A0
DOUT A2
(CAS latency = 2, 3)
CAS
CAS
Read A
The burst ends after a delay equal to the CAS latency.
Input data for the Write is masked.
T4
latency = 2, 3
DQ’s
NOP
(CAS latency = 2, 3)
T0
Command
CAS
CLK
DIN A1
T2
NOP
DIN A0
Write A
T1
DIN A2
NOP
T3
SPT03419
T6
Burst
Terminate
NOP
T5
NOP
NOP
T7
NOP
T8
don’t care
相關(guān)PDF資料
PDF描述
Q67100-Q2187 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2188 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2189 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2192 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2193 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2187 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2188 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2189 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2192 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2193 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module