參數(shù)資料
型號: Q67100-Q959
廠商: SIEMENS AG
英文描述: 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
中文描述: 100萬× 36位動態(tài)RAM模塊(2米× 18位動態(tài)隨機存儲器模塊)
文件頁數(shù): 50/53頁
文件大?。?/td> 418K
代理商: Q67100-Q959
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
49
20.2 CAS Latency = 3
T14
Bx
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address.
BS
Command
Bank A
AP
DQM
DQ
Addr.
Command
Bank A
Activate
Hi-Z
Read
RAx
RAx
CAx
page address back to zero
during this time interval.
The burst counter wraps
from the highest order
Activate
Command
Bank B
Ax
Ax 1
2
Ax+
Ax
~
~
-
RBx
RBx
~
~
~
~
~
~
Ax
Read
Command
Bank B
Ax
2
1
Ax
1
Bx
Bx 1
CBx
T3
CLK
CKE
CS
RAS
WE
CAS
T0
High
CK3
t
T1
T2
~
~
~
~
~
~
~
T4
T5
~
~
~
T7
T6
T8
T10
T9
T11
T13
T12
SPT03930
Bank B
Command
Activate
Bank B
Precharge
Command
Burst Stop
Command
+
+2
Bx
Bx
3
4
+
5
+
Bx
RBy
t
RRD
RBy
T20
Burst Length = Full Page, CAS Latency = 3
T17
T15
T16
T18
T19
T21 T22
相關(guān)PDF資料
PDF描述
Q67100-Q942 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Q67100-Q762 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
Q67100-Q764 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
Q67100-Q757 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
Q67100-Q758 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q960 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Q67100-Q961 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Q67100-Q971 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM
Q67100-Q973 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q976 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module