參數(shù)資料
型號(hào)： Q8010NH5
英文描述： Alternistor Triacs
中文描述： 交變雙向
文件頁數(shù)： 8/10頁
文件大?。?/td> 189K
代理商： Q8010NH5
Alternistor Triacs
Data Sheets
http://www.teccor.com
+1 972-580-7777
E4 - 8
2002 Teccor Electronics
Thyristor Product Catalog
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C
) – C
V
G
C
=
R
V
G
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C
) – C
I
G
C
=
R
I
G
0
-65
1.0
2.0
3.0
4.0
-15
+65
+25
+125
-40
Case Temperature (T
C
) – C
I
H
C
=
R
I
H
INITIAL ON-STATE CURRENT
= 400 mA dc 16 A to 40 A Devices
= 100 mA dc 6 to 12A Devices
200
120
40
1
2
3 4 5 6
8 10
20
30 40
60 80 100
200
300
600
1000
80
60
50
8
6
5
4
10
30
20
1
3
2
Surge Current Duration – Full Cycles
P
O
T
)
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Notes:
1) Gate control may be lost during and
immediately following surge current
interval
2) Overload may not be repeated until
junction temperature has returned
to steady state rated value.
10 A to 12 A Devices
8 A TO-251
and TO-252
8 A Devices
6 A Devices
6 A TO-251
and TO-252
1
10
100
1000
10
20
30
40
50
60
80
100
200
250
400
1000
Surge Current Duration – Full Cycles
P
O
T
)
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [I
]: Maximum
Rated Value at Specified Case Temperature
40 A Devices
35 A Devices
30 A Devices
25 A Devices
16 A Devices
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (I
GT
) – mA
I
GT
= 80 to 100 mA
T
T
g
)
I
GT
= 10 mA to 35 mA
I
GT
= 50 mA
相關(guān)PDF資料
PDF描述
Q8010RH5 Alternistor Triacs
Q8010LH5 Alternistor Triacs (6 A to 40 A)
Q8010RH5 Alternistor Triacs (6 A to 40 A)
Q8010R5 Triacs (0.8 A to 35 A)
Q8010R4 Triacs (0.8 A to 35 A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q8010NH5RP 功能描述:雙向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q8010NH5TP 功能描述:雙向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q8010R4 功能描述:雙向可控硅 800V 10A 25-25-25mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q8010R5 功能描述:雙向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q8010R5TP 功能描述:雙向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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