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參數(shù)資料
| 型號(hào)： | QIC1208001 |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Dual AC Switch IGBT Module 1200V 75A |
| 中文描述： | 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | QIC1208001 |
QIC1208001
Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual AC Switch IGBT Module
1200V 75A
Preliminary
Page 2
3/13/98
Electrical Charactistics
Characteristics (Each IGBT or Each Diode)
Symbol
Parameter
Min
Typ.
Max.
Units
IGBT
V
CES
V
GES
I
GES
I
CES
V
GE(th)
C
IES
C
OES
C
RES
R
th(j-c)
Collector Emitter Voltage (G-E SHORT)
Gate Emitter Voltage
Gate Leakage Current V
GE
=V
GES
V
CE
=0
Collector-Cutoff Current V
CE
=600V V
GE
=0
Gate Emitter Threshold Voltage I
C
=7.5mA V
CE
=10V
Input Capacitance V
CE
=10V V
GE
=0 f=1Mhz
Output Capacitance V
CE
=10V V
GE
=0 f=1Mhz
Reverse Transfer Capacitance V
CE
=10V V
GE
=0 f=1Mhz
Thermal Impedance Junction to case (Per IGBT)
1200
V
V
uA
mA
V
nF
nF
nF
C/W
K
20
0.5
1
7.5
4.5
6.0
15
5.3
3
0.21
DIODE
R
th(j-c)
Thermal Impedance Junction to case (Per Diode)
0.30
C/W
PACKAGE
Vrms
V Isolation
Module weight
Mounting torque M6 Mounting screw
Terminal torque, M6 Terminal Screw
Thermal Impedance Case to Sink
2500
V
g
190
4
6
Nm
Nm
C/W
R
th(jc-s)
0.08
Typical IGBT Collector-Emtter Saturation Voltage
0
1
2
3
4
5
0
25
50
75
100
125
150
Current (Amperes)
V
25C
125C
Typical Diode Vf
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
Current (Amperes)
V
25C
125
C
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