參數(shù)資料
型號(hào)： QIP0640001
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts)
中文描述： 400 A, 600 V, N-CHANNEL IGBT
封裝： HERMETIC SEALED, MODULE
文件頁數(shù)： 3/4頁
文件大?。?/td> 25K
代理商： QIP0640001
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Page 3
PRELIMINARY
06/06/97
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current (D2,D4)
Diode Forward Surge Current (D2,D4)
Diode Forward Current (D1,D3)
V Isolation
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
I
FM
I
FM
V
RMS
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Amperes
Volts
600
±
20
400
800*
400
800*
400
2500
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
CE
=V
CES
V
CE
=0V
I
C
=40mA,
V
CE
=10V
I
C
=400A,
V
GE
=15V
I
C
=400A,
V
GE
=15V,
T
j
=150
°
C
V
CC
=300V,
I
C
=400A,
V
GS
=15V
I
E
=400A,
V
GS
=0V
I
E
=200A,
V
GS
=0V
Min
Typ
Max
Units
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
I
CES
I
GES
1.0
0.5
7.5
mA
μ
A
Volts
V
GE(th)
4.5
6.0
Collector-Emitter Saturation Voltage
V
CE(sat)
2.1
2.8
Volts
V
CE(sat)
2.15
Volts
Total Gate Charge
Q
G
1200
nC
Diode Forward Voltage (D1,D3)
V
FM
2.0
Volts
Diode Forward Voltage (D2,D4)
V
FM
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=200A
V
GE1
=V
GE2
=15
V
R
G
=1.6
I
E
=400A
di
E
/dt=-
400A/
μ
S
I
E
=200A
di
E
/dt=-
400A/
μ
S
Min
Typ
Max
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
40
14
8
350
600
350
nF
nF
nF
nS
nS
nS
Fall Time
Diode Reverse Recovery (D1,D3)
Diode reverse Recovery Charge
(D1, D3)
Diode Reverse Recovery (D2, D4)
Diode reverse Recovery Charge
(D2,D4)
t
f
300
400
nS
nS
μ
C
trr
Qrr
80
trr
Qrr
110
nS
μ
C
1.08
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