- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361284 > QIQ0660001 (POWEREX INC) IGBT H-Series Chopper Hermetic Module (600 Amperes/600 Volts) PDF資料下載
參數(shù)資料
| 型號： | QIQ0660001 |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT H-Series Chopper Hermetic Module (600 Amperes/600 Volts) |
| 中文描述： | 600 A, 600 V, N-CHANNEL IGBT |
| 封裝： | HERMETIC SEALED, MODULE-5 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 168K |
| 代理商： | QIQ0660001 |
QIQ0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series Chopper
Hermetic Module
600 Amperes/600 Volts
Page 2
PRELIMINARY
06/06/97
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current (D2)
Diode Forward Current (D1)
V Isolation
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
I
FM
V
RMS
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Volts
600
±
20
600
1200*
600
400
2500
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
CE
=V
CES
V
CE
=0V
I
C
=60mA,
V
CE
=10V
I
C
=600A,
V
GE
=15V
I
C
=600A,
V
GE
=15V,
T
j
=150
°
C
V
CC
=300V,
I
C
=600A,
V
GS
=15V
I
E
=400A,
V
GS
I
E
=600A,
V
GS
=0V
Min
Typ
Max
Units
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
I
CES
I
GES
1.0
0.5
7.5
mA
μ
A
Volts
V
GE(th)
4.5
6.0
Collector-Emitter Saturation Voltage
V
CE(sat)
2.1
2.8
Volts
V
CE(sat)
2.15
Volts
Total Gate Charge
Q
G
1800
nC
Diode Forward Voltage (D1)
V
FM
2.0
Volts
Diode Forward Voltage (D2)
V
FM
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=600A
V
GE1
=V
GE2
=15
V
R
G
=1
I
E
=400A
I
E
=600A
di
E
/dt=
400A/
μ
S
di
E
/dt=
1200A/
μ
S
Min
Typ
Max
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
C
ies
C
oes
C
res
t
t
r
t
d(off)
60
21
12
nF
nF
nF
nS
nS
nS
Fall Time
Diode Reverse Recovery Time (D1)
Diode Reverse Recovery Time (D2)
Diode reverse Recovery Charge (D1)
t
f
300
400
110
nS
nS
nS
μ
C
trr
trr
Qrr
80
Diode reverse Recovery Charge (D2)
Qrr
1.62
μ
C
相關PDF資料 |
PDF描述 |
|---|---|
| QIQ1245001 | Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode |
| QIR0620001 | IGBT H-Series Chopper Module (200/300 Amperes/600 Volts) |
| QIS0660001 | Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts) |
| QIT-314-S001-01 | PRAEZISIONSSOCKEL 443/446 14POL |
| QIT-316-S001-01 | PRAEZISIONSSOCKEL 443/446 16POL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QIQ1245001 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode |
| QIR0620001 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:IGBT H-Series Chopper Module (200/300 Amperes/600 Volts) |
| QIS0660001 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts) |
| QIS1260015 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Single IGBTMOD NX-Series Module 600 Amperes/1200 Volts |
| QIS4506001 | 功能描述:IGBT MOD SINGLE 4500V 60A RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復。