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參數(shù)資料
| 型號： | QIR0620001 |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT H-Series Chopper Module (200/300 Amperes/600 Volts) |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-7 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 57K |
| 代理商： | QIR0620001 |
QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series
Chopper Module
200/300 Amperes/600 Volts
Page 2
PRELIMINARY
06/07/97
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current (D1)
Diode Forward Surge Current (D1)
Power Dissipation
V Isolation
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
I
FM
P
d
V
RMS
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
600
±
20
200
400*
300
600*
1100
2500
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
CE
=V
CES
V
CE
=0V
I
C
=20mA,
V
CE
=10V
I
C
=200A,
V
GE
=15V
I
C
=200A,
V
GE
=15V,
T
j
=150
°
C
V
CC
=300V,
I
C
=200A,
V
GS
=15V
I
E
=300A,
V
GS
=0V
Min
Typ
Max
Units
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
I
CES
I
GES
1.0
0.5
7.5
mA
μ
A
Volts
V
GE(th)
4.5
6.0
Collector-Emitter Saturation Voltage
V
CE(sat)
2.1
2.8
Volts
V
CE(sat)
2.15
Volts
Total Gate Charge
Q
G
600
nC
Diode Forward Voltage (D1)
V
FM
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=200A
V
GE1
=V
GE2
=15
V
R
G
=3.1
I
E
=200A
di
E
/dt=-
400A/
μ
S
Min
Typ
Max
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
20
7
4
200
550
300
nF
nF
nF
nS
nS
nS
Fall Time
Diode Reverse Recovery Time
Diode reverse Recovery Charge
t
f
300
110
nS
nS
μ
C
trr
Qrr
0.54
Thermal and Mechanical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Per IGBT
Min
Typ
Max
Units
Thermal Resistance, Junction to
R
θ
JC
0.16
°
C/W
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