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參數(shù)資料
| 型號： | QL4009-2PF100I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CAP CER 2.2UF 100V X7R 20% 2220 |
| 中文描述： | 9000可用可編程邏輯門QuickRAM ESP結合性能，密度和嵌入式內存 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 373K |
| 代理商： | QL4009-2PF100I |
QL4009 QuickRAM Data Sheet Rev B
Table 11: DC Characteristics
Symbol
Parameter
Conditions
Min
Max
Units
V
IH
Input HIGH Voltage
0.5V
CC
V
CCIO
+0.5
V
V
IL
Input LOW Voltage
-0.5
0.3V
CC
V
V
OH
Output HIGH Voltage
I
OH
= -12 mA
2.4
V
I
OH
= -500 μA
I
OL
= 16 mA
a
0.9V
CC
V
V
OL
Output LOW Voltage
a. Applies only to -1/-2/-3/-4 commercial grade devices. These speed grades are also PCI-compliant. All
other devices have 8 mA IOL specifications.
b. Capacitance is sample tested only. Clock pins are 12 pF maximum.
c. Only one output at a time. Duration should not exceed 30 seconds.
d. For -1/-2/-3/-4 commercial grade devices only. Maximum ICC is 3 mA for -0 commercial grade and all
industrial grade devices. and 5 mA for all military grade devices. For AC conditions, contact QuickLog-
ic customer applications group.
0.45
V
I
OL
= 1.5 mA
0.1V
CC
V
I
I
I or I/O Input Leakage Current
V
I
= V
CCIO
or GND
-10
10
μA
I
OZ
3-State Output Leakage Current
V
I
= V
CCIO
or GND
-10
10
μA
C
I
Input Capacitance
b
10
pF
I
OS
Output Short Circuit Current
c
V
O
= GND
-15
-180
mA
V
O
= V
CC
40
210
mA
I
CC
D.C. Supply Current
d
V
I
, V
IO
= V
CCIO
or GND
0.50 (typ)
2
mA
I
CCIO
D.C. Supply Current on V
CCIO
0
100
μA
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| QL4009-2PF100M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4009-2PF84C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4009-2PF84I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4009-2PF84M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4009-2PL68C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
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