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參數(shù)資料
| 型號(hào)： | QL4016-3PLM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| 中文描述： | 16000可用門(mén)QuickRAM ESP PLD的結(jié)合性能，密度和嵌入式內(nèi)存 |
| 文件頁(yè)數(shù)： | 11/18頁(yè) |
| 文件大?。?/td> | 478K |
| 代理商： | QL4016-3PLM |
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QL4016 QuickRAM Data Sheet Rev I
Power-up Sequencing
Figure 8: Power-up Requirements
The following requirements must be met when powering up the device (refer to
Figure 8
):
When ramping up the power supplies keep (V
-V
)
≤
500 mV. Deviation from
this recommendation can cause permanent damage to the device.
V
CCIO
must lead V
CC
when ramping the device.
The power supply must take greater than or equal to 400 μs to reach VCC. Ramping
to V
CC
/V
CCIO
earlier than 400 μs can cause the device to behave improperly.
An internal diode is present in-between V
CC
and V
CCIO
, as shown in
Figure 9
.
Figure 9: Internal Diode Between VCC and VCCIO
V
V
CCIO
V
CC
(V
CCIO
-V
CC
)
MAX
Time
400 us
V
CC
VCC
VCCIO
Internal Logic
Cells, RAM
blocks, etc
IO Cells
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