參數(shù)資料
型號: QL4058-0PB456M
廠商: Electronic Theatre Controls, Inc.
英文描述: 58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
中文描述: 58000可用門QuickRAM ESP PLD的結(jié)合性能,密度和嵌入式內(nèi)存
文件頁數(shù): 12/23頁
文件大小: 271K
代理商: QL4058-0PB456M
12
www.quicklogic.com
2002 QuickLogic Corporation
QL4058 QuickRAM Data Sheet Rev H
Power-up Sequencing
Figure 8: Power-up Requirements
The following requirements must be met when powering up the device (see
Figure 8
):
When ramping up the power supplies keep (V
-V
)
500 mV. Deviation from
this recommendation can cause permanent damage to the device.
V
CCIO
must lead V
CC
when ramping the device.
The power supply must take greater than or equal to 400 μs to reach VCC. Ramping
to V
CC
/V
CCIO
earlier than 400 μs can cause the device to behave improperly.
An internal diode is present in-between V
CC
and V
CCIO
, as shown in
Figure 9
.
Figure 9: Internal Diode Between VCC and VCCIO
V
V
CCIO
V
CC
(V
CCIO
-V
CC
)
MAX
Time
400 us
V
CC
VCC
VCCIO
Internal Logic
Cells, RAM
blocks, etc
IO Cells
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