參數(shù)資料
型號(hào): QLNA4S.01R
廠(chǎng)商: Conexant Systems, Inc.
英文描述: Q Band Low Noise Amplifier(工作頻率從40GHz到46GHz的低噪聲Q波段功率放大器)
中文描述: Q帶低噪聲放大器(工作頻率從40GHz的到46GHz的低噪聲Q波段功率放大器)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 43K
代理商: QLNA4S.01R
Q Band Low Noise Amplifier
02/18/00
Preliminary Specifications Subject to Change
qlna4s.4r
page 1
-20
-10
0
10
20
30
40
42
44
46
48
50
w304f23c86
Gain
Ret.Loss
d
GHz
QLNA4S.01R***
MMIC Features
Low Noise 2.5 dB N.F.
High Gain 22 dB Gain (min)
Frequency Range : 40-46 GHz
50
Zin / Zout
>10 dB Input / Output Return Loss
> 8 dBm Output power at 1dB gain
compression
Chip size : 1.5 mm X 0.7 mm
Substrate Thickness : 75
μ
m
Bond Pad dimensions 100
μ
m x 100
μ
m
Description
The Rockwell QLNA4S.01R is a PHEMT low noise amplifier that operates from 40 to 46 GHz. This 4 stage
amplifier has 24 dB nominal gain with 3.0 dB nominal noise figure and 1 dB gain compression of 8 dBm
output power minimum. This MMIC is unconditionally stable.
Absolute Maximum Ratings
Symbol
Parameters/Conditions
Min
Max
Units
V
d
1 2 3
Drain Supply Voltage
5
Volts
V
g
1 2 3
Gate Supply Voltage
-0.6
0.0
Volts
Id total
Total drain current
90
mA
Ig total
Total gate current
0.1
mA
Pin
RF input power
30
dBm
T ch
Operating channel temperature
150
°
C
T max
Max assembly temperature
300*
°
C
T stg
Max storage temperature
- 65
165
°
C
T base
Maximum base plate temperature
140
°
C
30 minute maximum
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