- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361298 > QM1000HA-24B (Mitsubishi Electric Corporation) HIGH POWER SWITCHING USE INSULATED TYPE PDF資料下載
參數(shù)資料
| 型號： | QM1000HA-24B |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | QM1000HA-24B |
Feb.1999
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Ratings
1200
1200
1200
7
1000
1000
7000
50
10000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
2100
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V, Emitter open
V
EB
=7V, Collector open
I
C
=1000A, I
B
=1.33A
I
C
=–1000A (diode forward voltage)
I
C
=1000A, V
CE
=4.0V
V
CC
=600V, I
C
=1000A, I
B1
=2A, –I
B2
=20A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
8.0
8.0
400
4.0
4.2
1.8
—
2.5
20
7.0
0.018
0.07
0.01
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM1000HA-2HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-24BK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-2HK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-2HBK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100E2Y2HK | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM1000HA2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 1KA I(C) |
| QM1000HA-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100CY-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DX-H | 制造商:n/a 功能描述:Power Module |
| QM100DY-24 | 制造商:n/a 功能描述:Darlington Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。