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參數(shù)資料
| 型號： | QM1000HA-2HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | QM1000HA-2HB |
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
1
10
1000
800
600
400
200
00
1
2
3
4
5
T
j
=25°C
I
B
=250mA
I
B
=1.33A
I
B
=4A
I
B
=0.5A
2 3 4 5 7
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7
T
j
=25°C
T
j
=125°C
4
10
3
10
2
10
2
10
3
10
V
CE
=4.0V
7
5
4
3
2
7
5
4
3
2
2.2
2.6
3.0
3.4
V
CE
=4V
T
j
=25°C
3.8
4.2
–1
10
0
10
1
10
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7
2 3 4 5 7
–1
10
10
V
BE(sat)
V
CE(sat)
1
10
0
10
1
2
10
3
10
T
j
=25°C
T
j
=125°C
I
B
=1.33A
–2
10
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
T
j
=25°C
T
j
=125°C
0
10
–1
10
1
10
I
C
=1000A
I
C
=800A
I
C
=600A
2
10
1
7
5
4
3
2
10
10
7
5
4
3
2
3 4 5 7
2 3 4 5 7
3
10
2
t
on
V
CC
=600V
I
B1
=2A
–I
B2
=20A
2 3
t
f
T
j
=25°C
T
j
=125°C
t
s
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