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參數(shù)資料
| 型號(hào)： | QM100DY-24BK |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | QM100DY-24BK |
Feb.1999
0
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10
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–1
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7
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0
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0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
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2
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3 4 5 7
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10
2 3 4 5 7
1
10
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2 3
7
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3
t
s
T
j
=25°C
T
j
=125°C
I
B1
=200mA
I
C
=100A
V
CC
=600V
t
f
240
00
1000
800
600
400
200
40
80
120
160
200
1200 1400
–I
B2
=2A
T
j
=125°C
7
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3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25°C
NON–REPETITIVE
50μs
100μs
200μs
1ms
DC
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2
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0.05
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0.15
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0.25
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2
7
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COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Z
t
°
C
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM100DY-2HK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-2HBK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100E2Y2HK | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
| KQ221K05 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 50A I(C) |
| KQ221K75 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 75A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM100DY24K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 100A I(C) |
| QM100DY-24K | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-2H | 制造商:n/a 功能描述:Darlington Module 制造商:Mitsubishi Electric 功能描述: |
| QM100DY2HBK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 100A I(C) |
| QM100DY-2HBK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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