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參數(shù)資料
| 型號(hào)： | QM100DY-2HK |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | QM100DY-2HK |
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
100
100
800
5
1000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=100A, I
B
=2A
–I
C
=100A (diode forward voltage)
I
C
=100A, V
CE
=2.8V/5V
V
CC
=600V, I
C
=100A, I
B1
=–I
B2
=2A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
400
2.5
3.5
1.8
—
3.0
15
3.0
0.155
0.65
0.075
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM100DY-2HBK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100E2Y2HK | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
| KQ221K05 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 50A I(C) |
| KQ221K75 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 75A I(C) |
| KQ224503 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 30A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM100DY-H | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-H1K | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
| QM100DY-HBK | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-HK | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100E2Y2HK | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
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