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參數(shù)資料
| 型號： | QM10HB-2H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
| 中文描述： | 驅(qū)動使用的高功率晶體管絕緣型 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | QM10HB-2H |
Feb.1999
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=5A, I
B
=1A
I
C
=5A, V
CE
=1V
V
CC
=600V, I
C
=5A, I
B1
=–I
B2
=1A
Transistor part
Conductive grease applied
Min.
—
—
—
—
—
5
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (c-f)
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
1000
1000
1000
7
10
100
2
–40~+150
–40~+125
2500
0.59~0.98
6~10
40
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
T
C
=25
°
C
DC
Charged part to case, AC for 1 minute
Mounting screw M3
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
P
C
I
B
T
j
T
stg
V
iso
—
—
Unit
V
V
V
V
A
W
A
°
C
°
C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
Limits
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
150
1.0
1.5
—
1.5
7.0
2.0
1.2
0.4
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