參數(shù)資料
型號(hào): QM15TD-H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 75K
代理商: QM15TD-H
Feb.1999
0
10
–1
10
–2
10
–3
10
0
10
10
2
10
1
10
7
5
4
3
2
10
7
5
4
3
2
0
40
80
120
160
200
180
20
60
100
140
10
10
2
10
7
5
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10
7
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0
2 3 4 5 7
1
10
2 3 4 5 7
10
10
0
10
10
I
rr
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=0.3A
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
0
3
2
7
5
3
2
4
4
4
4
4
5
3.2
2.8
2.4
1.2
1.6
0.8
0.4
I
r
r
μ
c
S
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM15TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM15TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG9B TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 15A I(C)
QM20TG9B TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 20A I(C)
QM1600S ASIC
QM200DY-24B HIGH POWER SWITCHING USE INSULATED TYPE
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