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參數(shù)資料
| 型號： | QM15TG-9B |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | QM15TG-9B |
Feb.1999
0
10
–1
10
–2
10
–3
10
0
10
1
10
3
10
2
10
1
10
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
–1
10
–1
10
100
80
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40
20
00
20
60
100 120
160
40
80
140
10
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70
90
1
10
7
5
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3
2
10
7
5
4
3
2
2 3 4 5 7
0
10
2 3 4 5 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
C
=15A
V
CC
=250V
I
B1
=70mA
t
f
00
200
400
500
100
300
20
30
10
T
j
=125°C
I
B2
=–2A
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25°C
NON–REPETITIVE
20s
1m
DC
50μs
100μs
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
0.4
1.2
1.6
2.0
0
7
5
3
2
0.8
7
5
3
2
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| QM15TG9B | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 15A I(C) |
| QM20TG9B | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 20A I(C) |
| QM1600S | ASIC |
| QM200DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-2HB | CAP, 10UF, CER, ?20%, Y5V, 10V, 1206 |
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| QM16XX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Compact PC Controller PC Performance for fixtures and test system control |
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