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參數(shù)資料
| 型號： | QM200DY-24B |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 85K |
| 代理商： | QM200DY-24B |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
T
j
=25°C
T
j
=125°C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
7
5
3
2
10
10
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
–3
10
–2
10
7
–1
10
3
10
2
10
1
10
0
10
10
–1
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
2 3 4 5 7
2 3 4 5 7
1
10
t
s
t
f
0
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=0.4A
I
C
=200A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
7
5
3
2
0
T
C
=25°C
NON-REPETITIVE
2
10
3
10
1
10
0
10
3
10
2
10
10
10
1ms
100μs
50μs
200μs
DC
7
5
3
2
7
5
3
2
5
3
2
0.10
0.08
0.06
0.04
0.02
0
0
10
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.4
2.4
2.0
1.6
1.2
0.8
10
400
00
400
800
1200
1600
300
200
100
I
B2
=–4A
T
j
=125°C
I
B2
=–8A
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM200DY-2HB | CAP, 10UF, CER, ?20%, Y5V, 10V, 1206 |
| QM200DY-2H | CAP CER 10UF 10V Y5V 1206 |
| QM200DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM200DY2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-H | 制造商:n/a 功能描述:Darlington Module |
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