參數(shù)資料
型號: QM200DY-2H
廠商: Mitsubishi Electric Corporation
英文描述: CAP CER 10UF 10V Y5V 1206
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 5/5頁
文件大小: 77K
代理商: QM200DY-2H
Feb.1999
7
5
4
3
2
7
5
4
3
2
0
400
800
1200
C
1600
2000
10
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0.32
0.24
0.16
0.08
0
10
7
5
3
2
10
10
10
–3
–2
10
–1
10
4
4
4
4
2
7
5
34
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
4
4
4
3
10
2
10
1
10
10
0
10
1
10
2
10
3
10
–1
10
0
10
1
10
2
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=4A
Q
rr
I
rr
t
rr
I
r
r
μ
c
S
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM200DY24 TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY24B TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
QM200DY2H TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200DY2HB TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200HA24 TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM200DY2HB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
QM200DY-2HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM200DY-H 制造商:n/a 功能描述:Darlington Module
QM200DY-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM200HA24 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)