參數(shù)資料
型號: QM20TD-HB
廠商: Mitsubishi Electric Corporation
英文描述: 122 x 32 pixel format, LED Backlight available
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 4/5頁
文件大小: 76K
代理商: QM20TD-HB
Feb.1999
0
10
–3
10
–2
10
7
–1
10
0
10
1
10
2
10
1
10
0
10
–1
10
10
0
1
10
2
10
3
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
4
3
2
10
7
5
4
3
10
3 4 5 7
0
10
2 3
2
–1
2
3
4 5 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=120mA
I
C
=20A
V
CC
=300V
t
f
50
00
800
600
200
30
40
20
10
400
700
500
100
300
T
j
=125°C
I
B2
=–0.5A
I
B2
=–3A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
20s
5m
DC
100μs
1m
10m
T
C
=25°C
NON–REPETITIVE
2
10
10
7
5
4
3
2
0
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
2.0
0
7
5
3
2
4
4
4
4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
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