參數(shù)資料
型號(hào): QM30DY-2H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 5/5頁
文件大?。?/td> 70K
代理商: QM30DY-2H
Feb.1999
–1
10
–2
10
–3
10
1
10
0
10
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
2
10
1
10
0
10
–1
10
3
10
–1
10
0
10
1
10
2
10
2
10
10
7
5
4
3
2
7
5
4
3
2
0
100
200
300
400
500
10
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
I
rr
t
rr
Q
rr
V
CC
=600V
I
B1
=–I
B2
=0.6A
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 45 7
3
2
7
5
4
I
r
r
μ
c
S
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30DY-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30DY-H CAP CER 1000PF 100V X7R 10% 0805
QM30 MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30DY24 TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 30A I(C)
QM30E2Y2H TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM30DY-H 制造商:n/a 功能描述:Darlington Module
QM30DY-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30E2Y 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30E2Y2H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C)
QM30E2Y-2H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE