參數(shù)資料
型號: QM30TB-24B
廠商: Mitsubishi Electric Corporation
英文描述: 122 x 32 pixel format, Compact LCD size
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 1/5頁
文件大?。?/td> 88K
代理商: QM30TB-24B
Feb.1999
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM30TB-24B
I
C
V
CEX
h
FE
Insulated Type
UL Recognized
Collector current ..........................
30A
Collector-emitter voltage .........
1200V
DC current gain.............................
750
Yellow Card No. E80276 (N)
File No. E80271
MITSUBISHI TRANSISTOR MODULES
QM30TB-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
7.5
21
7.5
21
7.5 16.5
19
28.5
28.5
21.5
BuP EuP
BvP EvP
BwP EwP
U
V
W
BuN EuN
BvN EvN
BwN EwN
P
N
127
98
110
±0.2
2
1
4
5
2–
φ
5.5
P
BuP
EuP
N
U
BuN
EuN
BvP
EvP
BwP
EwP
V
W
BvN
EvN
BwN
EwN
2
1
LABEL
Tab#250, t=0.8
Tab#110, t=0.5
7
2
Note: All Transistor Units are 4-Stage Darlingtons.
相關(guān)PDF資料
PDF描述
QM30TB-24 122 x 32 pixel format, Compact LCD size
QM30TB-2HB 122 x 32 pixel format, Compact LCD size
QM30TB-2H 122 x 32 pixel format, Compact LCD size
QM30TB24 Power inductor, 20% tol, SMT, RoHS
QM30TB24B TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 30A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM30TB2H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C)
QM30TB-2H 制造商:n/a 功能描述:Darlington Module
QM30TB2HB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C)
QM30TB-2HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30TF-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE