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參數(shù)資料
| 型號： | QM500 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 66K |
| 代理商： | QM500 |
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
600
600
600
7
500
500
1780
10
5000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
640
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=500A, I
B
=0.67A
–I
C
=500A (diode forward voltage)
I
C
=500A, V
CE
=2.5V
V
CC
=300V, I
C
=500A, I
B1
=1A, –I
B2
=10A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
5.0
5.0
500
2.5
3.5
1.8
—
3.0
10
3.5
0.07
0.25
0.04
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|---|---|
| QM500HA-H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM50CY-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50DY-24B | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50DY-24 | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50DY-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
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|---|---|
| QM500HA-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM50CY-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50DLE5 | 制造商:BEL 功能描述:BELFUSE 8 PIN 40/TUBE |
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