參數(shù)資料
型號: QM500HA-H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關使用絕緣型
文件頁數(shù): 4/5頁
文件大小: 66K
代理商: QM500HA-H
Feb.1999
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
0
10
–1
10
–2
10
–3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
10
0
1
10
3
10
2
10
1600
00
200
400
600
800
800
100
300
500
700
1400
1200
1000
600
400
200
T
j
=125°C
I
B2
=–3A
–10A
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CC
=300V
I
C
=500A
I
B1
=1A
T
j
=25°C
T
j
=125°C
t
s
t
f
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
DC
10m
1m
100μs
50μs
T
C
=25°C
NON–REPETITIVE
0
2.0
1.6
0.4
0.8
1.2
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.08
0.06
0.04
0.02
0
4
4
4
7
5
3
2
4
0
10
1
10
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
2m
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
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